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SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) Struktur
CAS-Nr.
Englisch Name:
SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)
Synonyma:
SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)
CBNumber:
CB3660184
Summenformel:
O2Si
Molgewicht:
60.0843
MOL-Datei:
Mol file

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) Eigenschaften

Sicherheit

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) Chemische Eigenschaften,Einsatz,Produktion Methoden

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS) Anbieter Lieferant Produzent Hersteller Vertrieb H?ndler.

Global( 0)Lieferanten
Firmenname Telefon E-Mail Land Produktkatalog Edge Rate
  • SILICON(IV) OXIDE SPUTTERING TARGET, 50.8MM (2.0IN) DIA X 6.35MM (0.250IN) THICK, 99.995% (METALS BASIS)
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